The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Apr. 10, 2012
Jack O. Chu, Manhasset Hills, NY (US);
Christos D. Dimitrakopoulos, Somers, NY (US);
Alfred Grill, White Plains, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
Jack O. Chu, Manhasset Hills, NY (US);
Christos D. Dimitrakopoulos, Somers, NY (US);
Alfred Grill, White Plains, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.