The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 30, 2014
Qualcomm Incorporated, San Diego, CA (US);
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Seong-Ook Jung, Seoul, KR;
Younghwi Yang, Seoul, KR;
Stanley Seungchul Song, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
Zhongze Wang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A static random-access memory (SRAM) memory cell includes a pair of cross-coupled inverters and a gating transistor coupled to a first node of a first inverter of the pair of cross-coupled inverters. A gate of the gating transistor is coupled to a first wordline. The gating transistor is configured to selectively couple a bitline to the first node of the first inverter responsive to a first wordline signal. The first inverter has a second node coupled to a second wordline. The first wordline and the second wordline are each independently controllable.