The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Oct. 28, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Luigi Pantisano, Saratoga Springs, NY (US);

Premachandran Chirayarikathuveedu, Clifton Park, NY (US);

Rakesh Ranjan, Mechanicsville, NY (US);

Anil Kumar, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); H05K 1/02 (2006.01); H05K 1/03 (2006.01); H05K 1/11 (2006.01); H05K 1/18 (2006.01); H05K 3/40 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
G01R 31/2851 (2013.01); G01R 31/2601 (2013.01); H05K 1/0212 (2013.01); H05K 1/032 (2013.01); H05K 1/115 (2013.01); H05K 1/185 (2013.01); H05K 3/4038 (2013.01); H05K 2201/10174 (2013.01); H05K 2203/1105 (2013.01);
Abstract

A device and method to control the heating of an IC chip in a wafer form for measuring various parameters associated therewith are provided. Embodiments include a device having a silicon layer with an upper surface, and on a plastic carrier; a plurality of devices in the silicon layer and electrically coupled through the upper surface to a test control system; a through silicon via (TSV) extending into the silicon layer; and a parallel heating structure adjacent to the plurality of devices electrically coupled to the test control system.


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