The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Jul. 21, 2014
Applicant:

Triquint Semiconductor, Inc., Hillsboro, OR (US);

Inventors:

Kurt Steiner, Orlando, FL (US);

Curtiss Hella, Opopka, FL (US);

Benjamin P. Abbott, Maitland, FL (US);

Daniel Chesire, Winter Garden, FL (US);

Chad Thompson, Apopka, FL (US);

Alan S. Chen, Windemere, FL (US);

Assignee:

TriQuint Semiconductor, Inc., Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/10 (2006.01); H03H 9/02 (2006.01); H01L 41/047 (2006.01); H01L 41/053 (2006.01); H03H 9/25 (2006.01); H01L 41/297 (2013.01); H04B 1/16 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H03H 9/02834 (2013.01); H01L 41/047 (2013.01); H01L 41/0477 (2013.01); H01L 41/0533 (2013.01); H01L 41/297 (2013.01); H03H 9/25 (2013.01); H04B 1/16 (2013.01); H04B 1/40 (2013.01);
Abstract

Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.


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