The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Sep. 29, 2014
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Hiroshi Inada, Osaka, JP;
Tatsuo Morita, Kyoto, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H02M 3/156 (2006.01); H01L 29/417 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 25/07 (2006.01); H01L 27/06 (2006.01); H03K 17/16 (2006.01); H01L 29/10 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01); H02M 3/158 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/156 (2013.01); H01L 25/072 (2013.01); H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 29/41725 (2013.01); H01L 29/41758 (2013.01); H01L 29/739 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/1066 (2013.01); H01L 2924/0002 (2013.01); H02M 1/08 (2013.01); H02M 3/1588 (2013.01); H02M 7/003 (2013.01); H02M 2001/0048 (2013.01); H03K 17/16 (2013.01); Y02B 70/1466 (2013.01); Y02B 70/1491 (2013.01);
Abstract
A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced.