The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

May. 23, 2013
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventor:

Sung-Hoon Moon, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 51/52 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/52 (2013.01); H01L 27/3248 (2013.01); H01L 29/786 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor includes a semiconductor formed on a substrate and having a source region, a first drain region spaced apart from the source region by a first current channel, and a second drain region spaced apart from the source region by a second current channel which has the different length from that of the first current channel, a gate electrode insulated from the semiconductor by a gate insulating layer, a source electrode connected to the source region of the semiconductor, a first drain electrode connected to the first drain region of the semiconductor, a second drain electrode connected to the second drain region of the semiconductor, and a bypass line electrically connecting the first drain region and the second drain region.


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