The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Mar. 14, 2011
Applicants:

Maki Okajima, Kawasaki, JP;

Keiji Okinaka, Narashino, JP;

Tetsuo Takahashi, Kawasaki, JP;

Hajime Muta, Zama, JP;

Yohei Iwasaki, Tokyo, JP;

Minako Nakasu, Tokyo, JP;

Naoki Yamada, Inagi, JP;

Yosuke Nishide, Kawasaki, JP;

Inventors:

Maki Okajima, Kawasaki, JP;

Keiji Okinaka, Narashino, JP;

Tetsuo Takahashi, Kawasaki, JP;

Hajime Muta, Zama, JP;

Yohei Iwasaki, Tokyo, JP;

Minako Nakasu, Tokyo, JP;

Naoki Yamada, Inagi, JP;

Yosuke Nishide, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/54 (2006.01); H01L 51/50 (2006.01); C09K 11/06 (2006.01); H05B 33/14 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5004 (2013.01); C09K 11/06 (2013.01); H01L 51/5012 (2013.01); H01L 51/5096 (2013.01); H05B 33/14 (2013.01); C09K 2211/1011 (2013.01); H01L 51/0052 (2013.01); H01L 51/0054 (2013.01); H01L 51/0085 (2013.01);
Abstract

Aspects of the present invention provide a blue organic light-emitting device having a continuous operation lifetime. An organic light-emitting device includes a light-emitting layer containing a dopant having the ability to trap electrons or holes, and a hole-blocking layer or electron-blocking layer, in which the difference between the LUMO of the dopant and the LUMO of a host material, the size relationship between the HOMO of the host material and the HOMO of the dopant, and the difference between the Tof the host material and the Tof the hole-blocking layer or between the Tof the host material and the Tof the electron-blocking layer, are specified.


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