The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Sep. 16, 2014
Applicant:
Kyungpook National University Industry-academic Cooperation Foundation, Daegu, KR;
Inventors:
Youngkyoo Kim, Daegu, KR;
Sungho Nam, Daegu, KR;
Hwajeong Kim, Daegu, KR;
Jooyeok Seo, Gyeongsanganm-do, KR;
Soohyeong Park, Gyeongsangbuk-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/05 (2006.01); G11C 13/00 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0591 (2013.01); G11C 13/0014 (2013.01); H01L 51/0529 (2013.01); H01L 51/0036 (2013.01);
Abstract
A non-volatile memory device includes a gate electrode, a data storage layer provided on the gate electrode, and a source electrode and a drain electrode provided on the data storage layer and spaced apart from each other. The data storage layer comprises three layers that form hetero-interfaces and have different permittivities from one another.