The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Jan. 28, 2013
Applicant:

Board of Trustees of Michigan State University, East Lansing, MI (US);

Inventor:

Shantanu Chakrabartty, Williamston, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 1/16 (2006.01); H01L 41/113 (2006.01); G11C 16/34 (2006.01); G11C 27/00 (2006.01); G01B 7/16 (2006.01); A61B 5/00 (2006.01); H01L 27/20 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1132 (2013.01); A61B 5/4509 (2013.01); A61B 5/4519 (2013.01); A61B 5/4533 (2013.01); A61B 5/6847 (2013.01); G01B 7/18 (2013.01); G11C 16/3468 (2013.01); G11C 16/3481 (2013.01); G11C 16/3486 (2013.01); G11C 27/005 (2013.01); H01L 27/20 (2013.01); H01L 29/7884 (2013.01);
Abstract

A linear hot-electron injection technique is provided for a non-volatile memory arrangement. The non-volatile memory is comprised of: a floating gate transistor; a capacitor with a first terminal electrically coupled to the gate node of the floating gate transistor; a current reference circuit electrically coupled to the source node of the floating gate transistor; and a feedback circuit electrically coupled between the source node of the floating gate transistor and a second terminal of the capacitor. The feedback circuit operates to adjust a voltage at the gate node of the floating gate transistor in accordance with a source-to-drain voltage across the floating gate transistor.


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