The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Sep. 24, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01); H01S 5/042 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0095 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 33/32 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01S 5/0425 (2013.01); H01S 5/32341 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.