The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Dec. 19, 2012
Applicant:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/18 (2010.01); H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/0735 (2012.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 33/32 (2010.01); H01L 33/08 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02439 (2013.01); H01L 21/02491 (2013.01); H01L 21/02546 (2013.01); H01L 21/02603 (2013.01); H01L 21/02642 (2013.01); H01L 31/03044 (2013.01); H01L 31/0352 (2013.01); H01L 31/03529 (2013.01); H01L 31/035227 (2013.01); H01L 31/0735 (2013.01); H01L 31/1848 (2013.01); H01L 31/1856 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/08 (2013.01); H01L 33/40 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgN, and forming at least one semiconducting micro- or nano-wire on the buffer layer.