The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Mar. 06, 2014
Applicant:

Eastman Kodak Company, Rochester, NY (US);

Inventors:

Shelby Forrester Nelson, Pittsford, NY (US);

Carolyn Rae Ellinger, Rochester, NY (US);

Assignee:

EASTMAN KODAK COMPANY, Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 29/1037 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film transistor includes a post on a substrate. The post has a height dimension extending away from the substrate to a top, and an edge along the height dimension. A cap covers the top of the post and extends to a distance beyond the edge of the post to define a reentrant profile. A conformal conductive gate layer is located on the edge of the post in the reentrant profile and not over the cap, and includes a portion that extends along the substrate. A conformal insulating layer is on the gate layer in the reentrant profile. A conformal semiconductor layer is on the insulating layer in the reentrant profile. First and second electrodes are located in contact with a first portion of the semiconductor layer over the cap and a second portion of the semiconductor layer not over the post, respectively.


Find Patent Forward Citations

Loading…