The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jul. 05, 2013
Applicant:
University of North Texas, Denton, TX (US);
Inventor:
Jeffry Kelber, Denton, TX (US);
Assignee:
UNIVERSITY OF NORTH TEXAS, Denton, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/267 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/76 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02527 (2013.01); H01L 29/04 (2013.01); H01L 29/1606 (2013.01); H01L 29/267 (2013.01); H01L 29/66666 (2013.01); H01L 29/76 (2013.01);
Abstract
We have demonstrated controlled growth of epitaxial h-BN on a metal substrate using atomic layer deposition. This permits the fabrication of devices such as vertical graphene transistors, where the electron tunneling barrier, and resulting characteristics such as ON-OFF rate may be altered by varying the number of epitaxial layers of h-BN. Few layer graphene is grown on the h-BN opposite the metal substrate, with leads to provide a vertical graphene transistor that is intergratable with Si CMOS technology of today, and can be prepared in a scalable, low temperature process of high repeatability and reliability.