The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jun. 29, 2005
Applicant:
Adam William Saxler, Durham, NC (US);
Inventor:
Adam William Saxler, Durham, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4×10cmand/or an isolation voltage of at least about 50V.