The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jul. 08, 2015
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Hiroyuki Kitabayashi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer; and an electrode layer in contact with the silicon carbide semiconductor layer. In a case where the electrode layer is equally divided into two in a thickness direction in one cross section of the electrode layer in the thickness direction to obtain a first region facing the silicon carbide semiconductor layer and a second region opposite to the silicon carbide semiconductor layer, an area of a carbon portion containing the carbon in the first region is wider than an area of the carbon portion in the second region. At an interface region located up to 300 nm from an interface between the silicon carbide semiconductor layer and the electrode layer, the carbon portion includes a plurality of portions disposed with a space interposed therebetween, and a ratio of area occupied by the carbon portion is not more than 40%.