The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Aug. 28, 2014
Andrew D. Koehler, Alexandria, VA (US);
Travis J. Anderson, Alexandria, VA (US);
Marko J. Tadjer, Springfield, VA (US);
Tatyana I. Feygelson, Springfield, VA (US);
Karl D. Hobart, Alexandria, VA (US);
Andrew D. Koehler, Alexandria, VA (US);
Travis J. Anderson, Alexandria, VA (US);
Marko J. Tadjer, Springfield, VA (US);
Tatyana I. Feygelson, Springfield, VA (US);
Karl D. Hobart, Alexandria, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.