The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Sep. 15, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventor:
Antonino Scuderi, San Diego, CA (US);
Assignee:
QUALCOMM, Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 29/7816 (2013.01); H03K 17/162 (2013.01);
Abstract
The present disclosure includes transistor devices and methods. In one embodiment, a transistor includes a gate, a source, and a drain. According to one aspect of the disclosure, different resistive paths in the drain are compensated using different gate-to-drain capacitances. According to another aspect of the disclosure, current enters a drain at a center tap point and flows symmetrically outward under two adjacent gates to two adjacent sources.