The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Apr. 09, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Johannes Donkers, Valkenswaard, NL;
Hans Broekman, Nijmegen, NL;
Stephan Heil, Eindhoven, NL;
Mark De Keijser, Millingen aan de Rijn, NL;
Cecilia van der Schaar, Beuningen, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 29/205 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/28575 (2013.01); H01L 21/28581 (2013.01); H01L 29/452 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract
Disclosed is a semiconductor device comprising at least one active layer () on a substrate () and a first contact () to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer () on the metal. A method of manufacturing such a semiconductor device is also disclosed.