The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Sep. 25, 2014
Sanken Electric Co., Ltd., Niiza-shi, Saitama, JP;
Toru Yoshie, Niiza, JP;
Sanken Electric Co., LTD., Niiza-shi, Saitama, JP;
Abstract
A semiconductor device includes: a gate oxide film formed on a surface of a semiconductor substrate; a gate electrode formed on the gate oxide film; and a high concentration impurity layer connected to a main electrode and formed on the surface of the semiconductor substrate, wherein an impurity species doped in the high concentration impurity layer comprises a first impurity species of phosphorous and a second impurity species of at least one of argon and nitrogen, a concentration of the second impurity species is higher than a concentration of the first impurity species in a surface of the high concentration impurity layer, and a peak position of a concentration distribution of the first impurity species in a depth direction in the high concentration impurity layer is deeper than a peak position of a concentration distribution of the second impurity species in the depth direction.