The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
May. 24, 2015
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Haifeng Zhou, Shanghai, CN;
Jun Tan, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
The invention discloses a treatment process for a semiconductor, comprising providing a substrate; defining a trench opening region of the substrate; performing plasma etching to form a trench region at the trench opening region; subjecting the substrate to a first epitaxial process with a first plurality of gaseous species to form a protective layer overlaying at least the first sidewall and the bottom of the trench region; and subjecting the substrate and the protective layer to a second epitaxial process with a second plurality of gaseous species to form a filling material overlaying the protective layer and being positioned at least partially within the trench region. The invention further provides a semiconductor processing technique used to eliminate or reduce dislocation defect on the semiconductor device and improve device performance. In the treatment process, at least one epitaxial process to form the protective layer overlaying at least the first sidewall and the bottom of the trench region corresponds to form a filling material overlaying the protective layer and being positioned at least partially within the trench region.