The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

May. 05, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongkyun Park, Suwon-si, KR;

Han-Young Kim, Anyang-si, KR;

Joon Kim, Seoul, KR;

Hyun Park, Suwon-si, KR;

Junghwan Oh, Yongin-si, KR;

Minhee Cho, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 21/20 (2006.01); H01L 49/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/28562 (2013.01); H01L 21/31116 (2013.01);
Abstract

A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.


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