The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Nov. 04, 2014
Canon Kabushiki Kaisha, Tokyo, JP;
Yusuke Onuki, Fujisawa, JP;
Hiroaki Naruse, Oita, JP;
Masashi Kusukawa, Sagamihara, JP;
Katsunori Hirota, Yamato, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A method of manufacturing a photoelectric conversion apparatus which includes a pixel circuit section having a well where a photoelectric conversion element and an amplification element configured to generate a signal based on an amount of charge generated in the photoelectric conversion element are arranged, and a peripheral circuit section having a MOS transistor. The method includes forming a dielectric film for covering the photoelectric conversion element, the amplification element, and a gate electrode of the MOS transistor and forming, by etching the dielectric film, a side spacer by remaining a portion of the dielectric film on a side surface of the gate electrode while protecting by a resist, wherein an opening is formed in the dielectric film of the pixel circuit section with the etching, and a contact for defining a potential of the well is formed through the opening.