The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Apr. 30, 2014
Applicant:

Sandisk Technologies, Inc., Plano, TX (US);

Inventor:

Tsuyoshi Hada, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES INC., Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 27/115 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02494 (2013.01); H01L 21/02587 (2013.01); H01L 21/31133 (2013.01);
Abstract

A method of fabricating a semiconductor device, such as a three-dimensional monolithic NAND memory string, includes providing an opening having a different sidewall material exposed on a sidewall of the opening than a bottom material exposed on a bottom of the opening, selectively forming a sacrificial material on the bottom of the opening but not on the sidewall of the opening, selectively forming a first layer on the sidewall of the opening but not on the sacrificial material located on the bottom of the opening, and selectively removing the sacrificial material to expose the bottom material on the bottom of the opening such that the first layer remains on the sidewall of the opening.


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