The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Apr. 23, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Qiuhua Han, Shanghai, CN;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate, forming a plurality of fins on the semiconductor substrate, forming a plurality of shallow trench isolation (STI) structures on the semiconductor substrate on opposite sides of the fins, forming a dummy gate on the fins, forming gate spacers on opposite sides of the dummy gate, etching a first portion of the STI structures disposed outside a gate region, the first portion having a first predetermined thickness, forming an interlayer dielectric over the semiconductor substrate, removing the dummy gate, etching a second portion of the STI structures disposed in the gate region, the second portion having a second predetermined thickness, and forming a high-k dielectric layer and a metal gate in an area where the dummy gate is removed.