The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9330982 B1

PDF
Full Text
Expired
Date of Patent:
May. 03, 2016

Filed:

Aug. 14, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Huy Cao, Rexford, NY (US);

Songkram Srivathanakul, Waterford, NY (US);

Jinping Liu, Ballston Lake, NY (US);

In Soo Jung, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02274 (2013.01); H01L 21/324 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01);
Abstract

A method of forming a diffusion barrier film over fins and the resulting device are provided. Embodiments include forming silicon fins over a substrate; depositing a borosilicate glass (BSG) liner cap over a first set of the silicon fins; depositing a phosphosilicate (PSG) liner cap over a second set of the silicon fins; and depositing a silicon oxycarbide (SiOC) diffusion barrier film over the BSG and PSG liner caps.


Find Patent Forward Citations

Cao, Huy. (2016). Semiconductor device with diffusion barrier film and method of manufacturing the same (U.S. Patent No. 9330982). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9330982

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