The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Feb. 19, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Bongkil Kim, Shanghai, CN;
Chuanmiao Zhou, Shanghai, CN;
Bing Guo, Shanghai, CN;
Xiaoyan Zhao, Shanghai, CN;
Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a memory cell disposed on the semiconductor substrate. The memory cell includes a selection transistor and a memory transistor. The selection transistor includes a selection gate, a first source, and a first drain. The memory transistor includes a floating gate, a control gate, a second source, a second drain, and a first insulating layer disposed between the floating gate and the control gate. The semiconductor device further includes a selection gate sidewall spacer disposed near an edge of a bit line of the selection gate of the selection transistor. The selection gate sidewall spacer is separated from the selection gate by a second insulating layer. The selection gate sidewall spacer and the control gate are formed of a first material.