The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Aug. 22, 2011
Applicants:
Jianping Zhang, El Monte, CA (US);
Chunhui Yan, El Monte, CA (US);
Inventors:
Jianping Zhang, El Monte, CA (US);
Chunhui Yan, El Monte, CA (US);
Assignee:
INVENLUX LIMITED, Central, HK;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 33/14 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02581 (2013.01); H01L 33/14 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01);
Abstract
A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.