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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9330905 B1

PDFFull Text
Expired
Date of Patent:
May. 03, 2016

Filed:

Mar. 18, 2013

Semiconductor device and manufacturing method of the same

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventor:

Takashi Onizawa, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Marvin Payne

Assistant Examiner:

Victor Barzykin

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/28 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02345 (2013.01); H01L 21/28264 (2013.01); H01L 29/401 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01); H01L 29/66659 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H01L 29/7835 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor device, in which the generation of interface states in the interface region between a nitride semiconductor layer and an aluminum oxide layer is suppressed, includes a first nitride semiconductor layer and an aluminum oxide layer. The first nitride semiconductor layer includes Ga. The aluminum oxide layer directly contacts the upper surface of the first nitride semiconductor layer, and includes H (hydrogen) atoms at least within a defined region from the interface with the first nitride semiconductor layer. In addition, the peak value of an H atom concentration in the above region is in a range of 1×10cmto 5×10cm.

Find Patent Forward Citations

Onizawa, Takashi. (2016). Semiconductor device and manufacturing method of the same (U.S. Patent No. 9330905). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9330905

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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