The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Dec. 10, 2012
Sharp Kabushiki Kaisha, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A photoelectric conversion element includes an optically transparent support, a porous semiconductor layer containing fine semiconductor particles and a photosensitizer, a conductive layer, and a counter electrode provided in that order, each of the porous semiconductor layer and the conductive layer contains a carrier-transport material. The porous semiconductor layer includes at least two layers each containing fine semiconductor particles having different particle sizes. The fine semiconductor particles contained in a layer of the layers located closest to the counter electrode, the layers constituting the porous semiconductor layer, have an average particle size of 380 nm or less.