The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Nov. 18, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Sungjun Kim, Seoul, KR;

Sangtae Kim, Hwaseong-si, KR;

Byunghoon Jeong, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 17/165 (2013.01);
Abstract

A nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array, an anti-fuse cell array, a sense amplifier, a page buffer, and a control logic. The memory cell array includes memory cells connected to word lines and bit lines. The anti-fuse cell array stores setting information for controlling the memory cell array. The anti-fuse cell array includes anti-fuse cells connected to the bit lines. The sense amplifier is connected to the bit lines to sense the memory cells or the anti-fuse cells. The page buffer stores data that is read out from the memory cells or the anti-fuse cells. The control logic controls the sense amplifiers and the page buffer to read out data from the memory cell array or the anti-fuse cell array.


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