The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Dec. 16, 2014
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

In Geun Lim, Seoul, KR;

Min Kyu Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/20 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/20 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01);
Abstract

A semiconductor memory device according to an embodiment of the present invention includes a first cell string and a second cell string coupled to a first word line group and a second word line group, respectively. An operating method of the semiconductor memory device may include forming a channel in the second cell string by applying a pass voltage to the second word line group, reflecting data of a selected memory cell coupled to a selected word line of the first word line group, among memory cells of the first cell string, on the channel of the second cell string through the bit line, and determining the data of the selected memory cell by sensing a quantity of electric charge of the second cell string through the bit line.


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