High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers

Abstract

A match-in-place-type compare operation utilizes a string of Magnetic Tunnel Junction (MTJ) elements including storage layers and sense layers having different anti-ferromagnetic structures respectively having higher and lower blocking temperatures. Confidential data is written into the storage layers of the MTJ elements by heating the elements above the higher blocking temperature, and then orienting the storage and sense layers in first storage magnetization directions using field lines. The elements are then cooled to an intermediate temperature between the higher and lower blocking temperatures, and the field lines are turned off, setting the sense layers to preliminary storage magnetization directions opposite to the first directions. During a pre-compare phase, an input logic pattern is written into the sense layers by heating to the intermediate temperature. During a compare operation, with the field lines turned off, resistance of the MTJ string is detected by passing a read current through the string.