The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Oct. 08, 2014
Applicants:

Bo-young Seo, Suwon-si, KR;

Yong-kyu Lee, Gwacheon-si, KR;

Choong-jae Lee, Hwaseong-si, KR;

Hee-seog Jeon, Suwon-si, KR;

Inventors:

Bo-Young Seo, Suwon-si, KR;

Yong-Kyu Lee, Gwacheon-si, KR;

Choong-Jae Lee, Hwaseong-si, KR;

Hee-Seog Jeon, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01);
Abstract

A magnetic memory device includes first and second magnetic memory cells coupled to first and second bit lines, respectively. The first and second magnetic memory cells respectively include a pinned magnetic layer, a free magnetic layer, and a tunnel insulating layer therebetween. Respective stacking orders of the pinned magnetic layer, the tunnel insulating layer, and the free magnetic layer are different in the first and second magnetic memory cells. The magnetic memory device further includes at least one transistor that is configured to couple the first and second magnetic memory cells to a common source line. Related methods of operation are also discussed.


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