The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jul. 02, 2012
Daniel E. Montenegro, Scotia, NY (US);
Jason B. Rothenberger, Colonie, NY (US);
Mark A. Prelas, Columbia, MO (US);
Robert V Tompson, Jr., Columbia, MO (US);
Annie Tipton, San Antonio, TX (US);
Daniel E. Montenegro, Scotia, NY (US);
Jason B. Rothenberger, Colonie, NY (US);
Mark A. Prelas, Columbia, MO (US);
Robert V Tompson, Jr., Columbia, MO (US);
Annie Tipton, San Antonio, TX (US);
The Curators of the University of Missouri, Columbia, MO (US);
Abstract
A method for detecting surface and bulk deep states in semiconductor materials is provided. In various embodiments, the method comprises configuring a detection circuit of charge based deep level transient spectrometer in one of a parallel mode and a series mode by controlling the configuration of a switching circuit of the detection circuit. The method additionally comprises generating digitized voltage charge outputs of a device under test utilizing the detection circuit as controlled via execution of an analog-to-digital conversion and timing program by a control system of the charge based deep level transient spectrometer. Furthermore, the method comprises obtaining desired information about deep level transients of the device under test based on the digitized voltage charge outputs via execution of a control system operable to execute a Q-DLTS data analysis program by the control system.