The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jun. 30, 2008
Applicant:
Masafumi Kunii, Kanagawa, JP;
Inventor:
Masafumi Kunii, Kanagawa, JP;
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/02 (2006.01); C23C 16/24 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0245 (2013.01); C23C 16/0272 (2013.01); C23C 16/24 (2013.01); C23C 16/45512 (2013.01); C23C 16/45565 (2013.01); C23C 16/5096 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 27/1214 (2013.01); H01L 29/66765 (2013.01); H01L 21/02573 (2013.01);
Abstract
Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SiH(n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.