The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Oct. 30, 2013
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Chris Levesque, Fountain Valley, CA (US);

Kevin Wesley Kobayashi, Redondo Beach, CA (US);

Praveen Varma Nadimpalli, Chandler, AZ (US);

Ricke W. Clark, Irvine, CA (US);

Assignee:

RF Micro Devices, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/21 (2006.01); H03F 1/52 (2006.01); H03F 1/30 (2006.01); H03F 3/193 (2006.01); H03G 3/30 (2006.01); H03F 3/72 (2006.01);
U.S. Cl.
CPC ...
H03F 3/21 (2013.01); H03F 1/305 (2013.01); H03F 1/523 (2013.01); H03F 3/193 (2013.01); H03G 3/3042 (2013.01); H03F 3/72 (2013.01); H03F 2200/18 (2013.01); H03F 2200/468 (2013.01); H03F 2203/45284 (2013.01);
Abstract

The present disclosure provides a power amplifier controller for starting up, operating, and shutting down a power amplifier. The power amplifier controller includes current sense amplifier circuitry adapted to monitor a main current of the power amplifier. A bias generator is also included and adapted to provide a predetermined standby bias voltage and an operational bias voltage based upon a main current level sensed by the current sense amplifier circuitry. The power amplifier controller further includes a sequencer adapted to control startup and shutdown sequences of the power amplifier. In at least one embodiment, the power amplifier is a gallium nitride (GaN) device, and the main current level sensed is a drain current of the GaN device. Moreover, the bias generator is a gate bias generator provided that the power amplifier is a field effect transistor (FET) device.


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