The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Mar. 07, 2014
Purnawirman Purnawirman, Watertown, MA (US);
Michael R. Watts, Hingham, MA (US);
Ehsan Shah Hosseini, Medford, MA (US);
Jonathan D. B. Bradley, Boston, MA (US);
Jie Sun, Cambridge, MA (US);
Matteo Cherchi, Espoo, FI;
Purnawirman Purnawirman, Watertown, MA (US);
Michael R. Watts, Hingham, MA (US);
Ehsan Shah Hosseini, Medford, MA (US);
Jonathan D. B. Bradley, Boston, MA (US);
Jie Sun, Cambridge, MA (US);
Matteo Cherchi, Espoo, FI;
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).