The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Jun. 04, 2012
Applicants:

Peter Dowben, Lincoln, NE (US);

Jeffry Kelber, Denton, TX (US);

Inventors:

Peter Dowben, Lincoln, NE (US);

Jeffry Kelber, Denton, TX (US);

Assignee:

QUANTUM DEVICES, LLC, Rockville, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C07F 5/02 (2006.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/4213 (2013.01); C07F 5/027 (2013.01); H01L 51/0043 (2013.01);
Abstract

Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band maximum from ˜4.3 eV below the Fermi level for pure boron carbide to −1.7 eV below the Fermi level when diaminobenzene is added. The surface photovoltage effect decreases with decreasing B/N atomic ratio. A neutron detector comprises the polymer as the p-type semiconductor to be paired with an n-type semiconductor.


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