The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jun. 17, 2014
Applicants:
Whankyun Kim, Seoul, KR;
Woojin Kim, Yongin-si, KR;
Woo Chang Lim, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); C23C 14/35 (2006.01); H01L 43/08 (2006.01); C23C 14/04 (2006.01); H01J 37/34 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); C23C 14/046 (2013.01); C23C 14/35 (2013.01); H01J 37/3408 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01);
Abstract
A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer on the wafer by reacting the reactive gas with a metal atom separated from the metal target by the inert gas.