The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Aug. 31, 2012
Applicants:

Hiroshi Katsuno, Tokyo, JP;

Satoshi Mitsugi, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Inventors:

Hiroshi Katsuno, Tokyo, JP;

Satoshi Mitsugi, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/20 (2010.01); H01L 33/58 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.


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