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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324913 B1

PDFFull Text
Expired
Date of Patent:
Apr. 26, 2016

Filed:

Jun. 02, 2014

Nitride semiconductor structure, multilayer structure, and nitride semiconductor light-emitting element

Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Songbaek Choe, Osaka, JP;

Shunji Yoshida, Kanagawa, JP;

Toshiya Yokogawa, Nara, JP;

Assignee:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

William Coleman

Assistant Examiner:

Kien Ly

Int. Cl.
CPC ...
H01L 33/32 (2010.01); C30B 25/04 (2006.01); C30B 29/40 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 33/06 (2010.01); C30B 25/18 (2006.01); C30B 29/68 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/02 (2010.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 25/04 (2013.01); C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/0265 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02642 (2013.01); H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/16 (2013.01); H01S 5/34333 (2013.01); H01S 2304/12 (2013.01);
Abstract

A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 μm.

Find Patent Forward Citations

Choe, Songbaek. (2016). Nitride semiconductor structure, multilayer structure, and nitride semiconductor light-emitting element (U.S. Patent No. 9324913). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9324913

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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