The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jun. 02, 2014
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); C30B 25/04 (2006.01); C30B 29/40 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 33/06 (2010.01); C30B 25/18 (2006.01); C30B 29/68 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/02 (2010.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 25/04 (2013.01); C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/0265 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02642 (2013.01); H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/16 (2013.01); H01S 5/34333 (2013.01); H01S 2304/12 (2013.01);
Abstract
A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 μm.