The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Dec. 19, 2012
Applicant:
Soitec, Crolles, FR;
Inventors:
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 31/0687 (2012.01); H01L 27/15 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01S 5/323 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02546 (2013.01); H01L 21/02664 (2013.01); H01L 27/153 (2013.01); H01L 31/03048 (2013.01); H01L 31/0687 (2013.01); H01L 31/1848 (2013.01); H01S 5/32341 (2013.01); H01S 5/32358 (2013.01); H01L 33/0062 (2013.01); H01L 33/08 (2013.01); Y02E 10/544 (2013.01);
Abstract
Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.