The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Dec. 03, 2014
Applicant:
Tsmc Solid State Lighting Ltd., Hsinchu, TW;
Inventors:
Hsin-Hsien Wu, Hsinchu, TW;
Chyi Shyuan Chern, Taipei, TW;
Chun-Lin Chang, Jhubei, TW;
Ching-Wen Hsiao, Hsinchu, TW;
Kuang-Huan Hsu, Hsinchu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/22 (2010.01); H01L 21/265 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 21/2654 (2013.01); H01L 21/26593 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 21/26546 (2013.01);
Abstract
A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.