The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Nov. 11, 2014
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventor:

Takayoshi Yamane, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01S 5/343 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01S 5/34333 (2013.01); H01L 33/325 (2013.01);
Abstract

A semiconductor light emitting element includes: an n-type semiconductor layer; a super lattice structure layer formed on the n-type semiconductor layer and including repeatedly-formed first semiconductor layers and second semiconductor layers having a composition with a band gap greater than that of the first semiconductor layer; an electron injection control layer including a first control layer formed on the second semiconductor layer of super lattice structure layer and a second control layer formed on the first control layer; and an MQW light emitting layer formed on the second control layer and including repeatedly-formed barrier layers and quantum well layers. The first control layer has a composition with a band gap smaller than that of the second semiconductor layer of super lattice structure layer. The second control layer has a composition and a thickness same as or smaller than those of the quantum well layer of the MQW light emitting layer.


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