The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Feb. 12, 2015
Cindy X. Qiu, Brossard, CA;
Andy Shih, Brossard, CA;
Yi-chi Shih, Los Angeles, CA (US);
Ishiang Shih, Brossard, CA;
Chunong Qiu, Brossard, CA;
Julia Qiu, Brossard, CA;
Cindy X. Qiu, Brossard, CA;
Andy Shih, Brossard, CA;
Yi-Chi Shih, Los Angeles, CA (US);
Ishiang Shih, Brossard, CA;
Chunong Qiu, Brossard, CA;
Julia Qiu, Brossard, CA;
Other;
Abstract
Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.