The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
May. 26, 2015
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd, Yongin, KR;
Hiroshi Goto, Kobe, JP;
Aya Miki, Kobe, JP;
Tomoya Kishi, Kobe, JP;
Kenta Hirose, Kobe, JP;
Shinya Morita, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Byung Du Ahn, Hwaseong, KR;
Gun Hee Kim, Asan, KR;
Yeon Hong Kim, Hwaseong, KR;
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.