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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324880 B1

PDFFull Text
Date of Patent:
Apr. 26, 2016

Filed:

Feb. 07, 2014

Thin film transistor and method of producing the same, display device, image sensor, x-ray sensor, and x-ray digital imaging device

Applicant:

Fujifilm Corporation, Minato-ku, Tokyo, JP;

Inventors:

Masashi Ono, Kanagawa, JP;

Masahiro Takata, Kanagawa, JP;

Atsushi Tanaka, Kanagawa, JP;

Masayuki Suzuki, Kanagawa, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Jarrett Stark

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 27/146 (2006.01); H01L 21/02 (2006.01); H05B 33/10 (2006.01); H05B 33/26 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 21/02422 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/14658 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H05B 33/10 (2013.01); H05B 33/26 (2013.01); H01L 27/14659 (2013.01); H01L 27/3234 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a)Ga(b)Zn(c)O(d), wherein 0<a≦37/60, 3a/7−3/14≦b≦91a/74−17/40, b>0, 0<c≦3/5, a+b+c=1, and d>0, and a second region represented by In(p)Ga(q)Zn(r)O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween. A source electrode and a drain electrode are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.

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