The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Aug. 27, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Shintaro Nakano, Kanagawa-ken, JP;
Tomomasa Ueda, Kanagawa-ken, JP;
Kentaro Miura, Kanagawa-ken, JP;
Nobuyoshi Saito, Kanagawa-ken, JP;
Tatsunori Sakano, Tokyo, JP;
Hajime Yamaguchi, Kanagawa-ken, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×10atm/cm, and not more than 10atm/cm, respectively.