The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Feb. 18, 2015
International Business Machines Corporation, Armonk, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Bahman Hekmatshoartabari, White Plains, NY (US);
Harold John Hovel, Katonah, NY (US);
Ning Li, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A gate dielectric material and a gate conductor portion are formed on a single-crystal semiconductor material of a substrate. A dielectric structure is then formed surrounding the gate conductor portion and thereafter a stressor layer is formed on the dielectric structure. A controlled spalling process is then performed and thereafter a material removal process can be used to expose a surface of the single-crystal semiconductor material. A source region and a drain region are then formed on the exposed surface of the single-crystal semiconductor material, which exposed surface is opposite the surface including the gate dielectric.