The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jan. 30, 2015
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Teruhisa Ikuta, Toyama, JP;
Akira Fukumoto, Toyama, JP;
Abstract
A semiconductor device has on a semiconductor layer: a gate insulating film formed, extending from a second emitter region toward a buffer region beyond a first body region, and covering part of a drift region; and a gate electrode. The second emitter region contacts a first emitter region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second emitter region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first emitter region closer to the gate electrode to a region under the gate electrode.